J309 / J310 / MMBFJ309 / MMBFJ3
10 — N-Channel
RF Amplifier
? 2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 1
December 2010
J309 / J310 / MMBFJ309 / MMBFJ310
N-Channel RF Amplifier
Features
? This device is designed for VHF/UHF amplifier, oscillator and mixer applications.
? As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized.
? Sourced from Process 92.
? Source & Drain are interchangeable.
Absolute Maximum Ratings * Ta
= 25
°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics Ta
= 25
°C unless otherwise noted
* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".
Symbol Parameter Value Units
VDS
Drain-Source Voltage 25 V
VGS
Gate-Source Voltage -25 V
IGF
Forward Gate Current 10 mA
TJ, Tstg
Operating and Storage Junction
Temperature Range - 55 to +150
°C
Symbol Parameter
Max.
Units
J309-J310 *MMBFJ309-310
PD
Total Device Dissipation
Derate above 25°C
625
5.0
350
2.8
mW
mW/°C
RθJC
Thermal Resistance, Junction to Case 127
°C/W
RθJA
Thermal Resistance, Junction to Ambient 357 556
°C/W
J309
MMBFJ309
SOT-23
Mark MMBFJ309 : 6U
G
D
S
J310
MMBFJ310
MMBFJ310 : 6T
GS
D
TO-92
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